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STW16NB60 bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh??MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STW16NB60 bảng dữ liệu(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.567
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
16
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
600
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
345
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V, ID =8A
0.3
0.35
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID =8A
14.5
S
Ciss
Input Capacitance
VDS = 25V,f= 1MHz,VGS =0
3300
pF
Coss
Output Capacitance
465
pF
Crss
Reverse Transfer
Capacitance
45
pF


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