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STH13NB60FI bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
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STW13NB60
STH13NB60FI
N - CHANNEL 600V - 0.48
Ω - 13A - TO-247/ISOWATT218
PowerMESH
™ MOSFET
s
TYPICAL RDS(on) = 0.48
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
January 2000
TO-247
ISOWATT218
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
STW 13NB60
STH13NB60FP
VDS
Drain-source Voltage (VGS =0)
600
V
VDGR
Drain- gate Volt age (RGS =20 k
Ω)
600
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC13
8.6
A
ID
Drain Current (continuous) at Tc =100
oC8.2
5.4
A
IDM (
•)
Drain Current (pulsed)
52
52
A
Ptot
T otal Dissipation at Tc =25
oC
190
80
W
Derating Factor
1.52
0.64
W /
o C
dv/dt (1)
Peak Diode Recovery volt age slope
4
4
V/ns
VISO
I nsulat ion W ithstand Voltage (DC)
2000
V
Tstg
Storage Temperat ure
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
ST W13NB60
ST H13NB60FI
600 V
600 V
<0.54
<0.54
13 A
8.6 A
1
2
3
1
2
3
1/9


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