STW10NB60 datasheet(1/8 Pages) STMICROELECTRONICS

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STW10NB60

N - CHANNEL 600V - 0.69

Ω - 10A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.69

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs with

outstanding performances. The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

®

INTERNAL SCHEMATIC DIAGRAM

October 1998

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC10

A

ID

Drain Current (continuous) at Tc =100

oC6.2

A

IDM (

•)

Drain Current (pulsed)

40

A

Ptot

T otal Dissipat ion at Tc =25

oC

160

W

Derating Factor

1.28

W /

o C

dv/dt( 1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST W10NB60

600 V

< 0.8

Ω

10 A

1/8

Số phần tương tự - STW10NB60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW10N105K5	724Kb / 18P	Ultra low gate charge October 2014 Rev 2
	STW10N95K5	1Mb / 22P	Switching applications January 2014 Rev 3
	STW10NA50	243Kb / 11P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET
	STW10NC70Z	249Kb / 8P	N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET

More results

Mô tả tương tự - STW10NB60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET
	STW16NB60	252Kb / 8P	N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh??MOSFET
	STW12NB60	250Kb / 8P	N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET
	STGW12NB60H	86Kb / 8P	N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
	STGW30NB60HD	91Kb / 8P	N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
	STW13NB60	111Kb / 9P	N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
	STGW12NB60HD	90Kb / 8P	N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
	STGW20NB60H	85Kb / 8P	N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
	STGW20NB60HD	90Kb / 8P	N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
	STGW30NB60H	86Kb / 8P	N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT

More results

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