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3 / 10 page 3/10 STU8NC90Z/STU8NC90ZI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) SWITCHING OFF (INDUCTIVE LOAD) SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 400V, ID = 4A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 36 ns tr Rise Time 12 ns Qg Total Gate Charge VDD = 720V, ID = 8 A, VGS = 10V 73 102 nC Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 27 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 720V, ID = 8 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 36 ns tf Fall Time 45 ns tc Cross-over Time 77 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 7 A ISDM (2) Source-drain Current (pulsed) 28 A VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 8 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 860 ns Qrr Reverse Recovery Charge 10 µC IRRM Reverse Recovery Current 24 A Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 25 V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance IGS = 50 mA, VGS = 0 90 Ω |
Số phần tương tự - STU8NC90Z |
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Mô tả tương tự - STU8NC90Z |
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