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STW24NM65N bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET
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February 2008
Rev 1
1/19
19
STW24NM65N-STI24NM65N-STF24NM65N
STB24NM65N - STP24NM65N
N-channel 650 V - 0.16
Ω - 19 A - TO-220 - TO-220FP - D2PAK
I2PAK - TO-247 second generation MDmesh™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@TJmax)
RDS(on) max
ID
STB24NM65N
710 V
< 0.19
19 A
STI24NM65N
710 V
< 0.19
19 A
STF24NM65N
710 V
< 0.19
19 A(1)
1.
Limited only by maximum temperature allowed
STP24NM65N
710 V
< 0.19
19 A
STW24NM65N
710 V
< 0.19
19 A
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
1
2
3
TO-247
1
3
D²PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB24NM65N
24NM65N
D²PAK
Tape and reel
STI24NM65N
24NM65N
I²PAK
Tube
STF24NM65N
24NM65N
TO-220FP
Tube
STP24NM65N
24NM65N
TO-220
Tube
STW24NM65N
24NM65N
TO-247
Tube
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