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STF23NM60N bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET
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March 2008
Rev 3
1/19
19
STB23NM60N-STF23NM60N
STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150
Ω - 19 A - D2PAK - I2PAK - TO-220/FP
TO-247, second generation MDmesh™ Power MOSFET
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB23NM60N
650 V
0.180
19 A
STI23NM60N
19 A
STF23NM60N
19 A (1)
1.
Limited only by maximum temperature allowed
STP23NM60N
19 A
STW23NM60N
19 A
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
1
2
3
TO-247
D²PAK
1
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB23NM60N
23NM60N
D²PAK
Tape and reel
STI23NM60N
23NM60N
I²PAK
Tube
STF23NM60N
23NM60N
TO-220FP
Tube
STP23NM60N
23NM60N
TO-220
Tube
STW23NM60N
23NM60N
TO-247
Tube
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