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STW14NM65N bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
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October 2008
Rev 2
1/18
18
STB14NM65N, STF14NM65N
STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33
Ω, 12 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@TJmax)
RDS(on)
max
ID
STI14NM65N
710 V
< 0.38
12 A
STB14NM65N
710 V
< 0.38
12 A
STF14NM65N
710 V
< 0.38
12 A(1)
1.
Limited only by maximum temperature allowed
STP14NM65N
710 V
< 0.38
12 A
STW14NM65N
710 V
< 0.38
12 A
TO-220
TO-220FP
TO-247
I²PAK
1
2
3
1
2
3
1
2
3
1
2
3
1
3
D²PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STI14NM65N
14NM65N
I²PAK
Tube
STB14NM65N
14NM65N
D²PAK
Tape and reel
STF14NM65N
14NM65N
TO-220FP
Tube
STP14NM65N
14NM65N
TO-220
Tube
STW14NM65N
14NM65N
TO-247
Tube
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