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STB11NK50ZT4 bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 500 V, 0.48 廓 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
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STB11NK50ZT4 bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Electrical characteristics
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 250 V, ID=5.5 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 19)
14.5
18
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 250 V, ID=5.5 A,
RG = 4.7 Ω, VGS=10 V
(see Figure 19)
41
15
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID=11.4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
11.5
12
27
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
10
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
40
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=10 A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10 A,
di/dt = 100 A/µs,
VDD=45 V, Tj=150 °C
308
2.4
16
ns
µC
A
Table 9.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=±1mA (open drain)
30
V


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