STPS3030CG datasheet(3/6 Pages) STMICROELECTRONICS

tên linh kiện	STPS3030CG

Giải thích chi tiết về linh kiện	LOW DROP POWER SCHOTTKY RECTIFIER

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STPS3030CT/CG/CR

3/6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

T

δ=tp/T

tp

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0

5

10

15

20

25

30

VR(V)

T

j=150°C

T

j=125°C

T

j=25°C

T

j=100°C

T

j=75°C

T

j=50°C

IR(mA)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

0.1

1.0

10.0

1

10

100

VR(V)

F=1MHz

V

osc=30mV

T

j=25°C

C(nF)

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

0

25

50

75

100

125

150

175

200

225

250

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

T

C=25°C

T

C=75°C

T

C=125°C

IM(A)

Fig. 5: Non repetitive surge peak forward

current versus overload duration (maximum

values).

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

(V)

FM

T

j=25°C

(Maximum values)

T

j=125°C

(Maximum values)

T

j=125°C

(Maximum values)

T

j=125°C

(Typical values)

T

j=125°C

(Typical values)

IFM(A)

Fig. 9: Forward voltage drop versus forward

current.

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

S(cm²)

D²PAK

Rth(j-a)(°C/W)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (epoxy printed

board FR4, Cu = 35µm).

Số phần tương tự - STPS3030CG

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STPS3030CG	132Kb / 9P	Low drop power Schottky rectifier
STMicroelectronics	STPS3030CG-TR	132Kb / 9P	Low drop power Schottky rectifier

More results

Mô tả tương tự - STPS3030CG

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