Electrical Characteristics

MC9S08QA4 Series, Rev. 2

Freescale Semiconductor

7

A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete

DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot

temperature, unless specified otherwise in the device specification.

3.5

DC Characteristics

This section includes information about power supply requirements and I/O pin characteristics.

Table 4. ESD and Latch-up Test Conditions

Model

Description

Symbol

Value

Unit

Human

Body

Series resistance

R1

1500

Ω

Storage capacitance

C

100

pF

Number of pulses per pin

3

Machine

Series resistance

R1

0

Ω

Storage capacitance

C

200

pF

Number of pulses per pin

3

Latch-up

Minimum input voltage limit

–2.5

V

Maximum input voltage limit

7.5

V

Table 5. ESD and Latch-Up Protection Characteristics

No.

under typical conditions unless otherwise noted.

Symbol

Min

Max

Unit

1

Human body model (HBM)

±2000

—

V

2

Machine model (MM)

±200

—

V

3

Charge device model (CDM)

±500

—

V

4

±100

—

mA

Table 6. DC Characteristics (Temperature Range = –40 to 85

°C Ambient)

Parameter

Symbol

Min

Typical

Max

Unit

Supply voltage (run, wait, and stop modes)

V

1.8

—

3.6

(rising)

—3.6

1,2

——

V

Low-voltage detection threshold

1.80

1.82

1.91

V

1.88

1.90

1.99

Low-voltage warning threshold

2.08

2.1

2.2

V