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MC9S08QA2CDNE bảng dữ liệu(PDF) 7 Page - Freescale Semiconductor, Inc |
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MC9S08QA2CDNE bảng dữ liệu(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 32 page Electrical Characteristics MC9S08QA4 Series, Rev. 2 Freescale Semiconductor 7 A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. 3.5 DC Characteristics This section includes information about power supply requirements and I/O pin characteristics. Table 4. ESD and Latch-up Test Conditions Model Description Symbol Value Unit Human Body Series resistance R1 1500 Ω Storage capacitance C 100 pF Number of pulses per pin 3 Machine Series resistance R1 0 Ω Storage capacitance C 200 pF Number of pulses per pin 3 Latch-up Minimum input voltage limit –2.5 V Maximum input voltage limit 7.5 V Table 5. ESD and Latch-Up Protection Characteristics No. Rating1 1 Parameter is achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. Symbol Min Max Unit 1 Human body model (HBM) VHBM ±2000 — V 2 Machine model (MM) VMM ±200 — V 3 Charge device model (CDM) VCDM ±500 — V 4 Latch-up current at TA = 85°CILAT ±100 — mA Table 6. DC Characteristics (Temperature Range = –40 to 85 °C Ambient) Parameter Symbol Min Typical Max Unit Supply voltage (run, wait, and stop modes) V (VDD falling) VDD 1.8 — 3.6 (VDD rising) VLVDL (rising) —3.6 Minimum RAM retention supply voltage applied to VDD VRAM Vpor 1,2 —— V Low-voltage detection threshold (VDD falling) VLVD 1.80 1.82 1.91 V (VDD rising) 1.88 1.90 1.99 Low-voltage warning threshold (VDD falling) VLVW 2.08 2.1 2.2 V |
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