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FQA10N80C bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FQA10N80C bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FQA10N80C_F109 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 17.3mH, IAS =10.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQA10N80C FQA10N80C_F109 TO-3PN -- -- 30 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.98 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A -- 0.93 1.1 Ω gFS Forward Transconductance VDS = 50 V, ID = 5.0 A (Note 4) -- 5.8 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2150 2800 pF Coss Output Capacitance -- 180 230 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 10.0A, RG = 25 Ω (Note 4, 5) -- 50 110 ns tr Turn-On Rise Time -- 130 270 ns td(off) Turn-Off Delay Time -- 90 190 ns tf Turn-Off Fall Time -- 80 170 ns Qg Total Gate Charge VDS = 640 V, ID = 10.0A, VGS = 10 V (Note 4, 5) -- 45 58 nC Qgs Gate-Source Charge -- 13.5 -- nC Qgd Gate-Drain Charge -- 17 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =10.0 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 10.0 A, dIF / dt = 100 A/µs (Note 4) -- 730 -- ns Qrr Reverse Recovery Charge -- 10.9 -- µC |
Số phần tương tự - FQA10N80C |
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Mô tả tương tự - FQA10N80C |
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