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FDD8876 bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDD8876 bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©200 8 Fairchild Semiconductor Corporation FDD8876 / FDU8876 Rev. A 3 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25°C, L = 0.24mH, IAS = 28A, VDD = 27V, VGS = 10V. 3 Device Marking Device Package Reel Size Tape Width Quantity FDD8876 FDD8876 TO-252AA 13” 12mm 2500 units FDU8876 FDU8876 TO-251AA Tube N/A 75 units F F Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 35A, VGS = 10V - 0.0066 0.0082 Ω ID = 35A, VGS = 4.5V - 0.008 0.010 ID = 35A, VGS = 10V, TJ = 175 oC - 0.011 0.013 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1700 - pF COSS Output Capacitance - 330 - pF CRSS Reverse Transfer Capacitance - 200 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 2.2 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 35A Ig = 1.0mA -34 47 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 18 26 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.4 1.9 nC Qgs Gate to Source Gate Charge - 4.2 - nC Qgs2 Gate Charge Threshold to Plateau - 2.8 - nC Qgd Gate to Drain “Miller” Charge - 8.0 - nC tON Turn-On Time VDD = 15V, ID = 35A VGS = 10V, RGS = 10Ω - - 149 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 91 - ns td(OFF) Turn-Off Delay Time - 44 - ns tf Fall Time - 37 - ns tOFF Turn-Off Time - - 122 ns VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V ISD = 15A - - 1.0 V trr Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- - 26 ns QRR Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- - 12 nC |
Số phần tương tự - FDD8876 |
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Mô tả tương tự - FDD8876 |
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