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FDD5810 bảng dữ liệu(PDF) 5 Page - Fairchild Semiconductor

tên linh kiện FDD5810
Giải thích chi tiết về linh kiện  N-Channel Logic Level Trench짰 MOSFET
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5810 bảng dữ liệu(HTML) 5 Page - Fairchild Semiconductor

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FDD5810 Rev. A (W)
www.fairchildsemi.com
5
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics T
J = 25°C unless otherwise noted
110
100
0.1
1
10
100
200
10us
100us
1ms
10ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25
oC
DC
200
1
10
100
0.001
0.01
0.1
1
10
100
500
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25oC
STARTING TJ = 150oC
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
0
20
40
60
01.0
2.0
3.0
4.0
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 175oC
TJ = 25oC
TJ = -55oC
PULSE DURATION = 80
μs
DUTY CYCLE = 0.5% MAX
VDD = 6V
0
20
40
60
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μs
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 10V
VGS = 3.5V
VGS = 3V
VGS = 4.5V
VGS = 4V
VGS = 5V
14
18
22
26
24
68
10
ID = 1A
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 35A
PULSE DURATION = 80
μs
DUTY CYCLE = 0.5% MAX
30
-80
-40
0
40
80
120
160
200
0.4
0.8
1.2
1.6
2.0
2.4
2.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 32A
VGS = 10V
TJ, JUNCTION TEMPERATURE(oC)


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