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FFPF10H60S bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FFPF10H60S bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page tm ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com April 2007 FFPF10H60S Rev. A FFPF10H60S Hyperfast 2 Rectifier Features • High Speed Switching ( trr=25ns(Typ.) @ IF=10A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated • Low Forward Voltage( VF=2.1V(Typ.) @ IF=10A ) Applications • General Purpose • Switching Mode Power Supply • Free-wheeling diode for motor application • Power switching circuits 10A, 600V Hyperfast 2 Rectifier The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar con- struction. This device is intended for use as freewheeling/clamping rectifi- ers in a variety of switching power supplies and other power swithching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transis- tors. Pin Assignments Absolute Maximum Ratings Thermal Characteristics Package Marking and Ordering 1. Cathode 2. Anode TO-220F-2L 1 1. Cathode 2. Anode 2 Symbol Parameter Value Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 85 °C10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 100 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Symbol Parameter Max Units RθJC Maximum Thermal Resistance, Junction to Case 3.4 °C/W Device Marking Device Package Reel Size Tape Width Quantity F10H60S FFPF10H60STU TO-220F - - 50 TC = 25°C unless otherwise noted TC = 25°C unless otherwise noted Information |
Số phần tương tự - FFPF10H60S |
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Mô tả tương tự - FFPF10H60S |
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