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ES1J bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
ES1F - ES1J Rev. A
July 2007
ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Electrical Characteristics T
C = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
ES1F
ES1G
ES1H
ES1J
VRRM
Maximum Repetitive Reverse Voltage
300
400
500
600
V
IF(AV)
Average Rectified Forward Current
1.0
A
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
30
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
PD
Power Dissipation
1.47
W
Symbol
Parameter
Value
Units
RθJA
Thermal Resistance, Junction to Ambient *
85
°C/W
RθJL
Thermal Resistance, Junction to Lead *
35
°C/W
Symbol
Parameter
Value
Units
VF
Maximum Forward Voltage @ IF = 1.0 A
1.3
1.7
V
Trr
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
35
ns
IR
Maximum Reverse Current @ rated VR
TA = 25
°C
TA = 100
°C
5.0
100
uA
Cj
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
10.0
8.0
pF
Color Band Denotes Cathode
SMA(DO-214AC)


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