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STPIC6A259 bảng dữ liệu(PDF) 4 Page - STMicroelectronics |
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4 / 13 page STPIC6A259 4/13 DC CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.) SWITCHING CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.) Note 1: All Voltage valuea are with respect to LGND and PGND Note 2: Each power DMOS source is internally connected to GND Note 3: Pulse duration ≤ 100ms and duty cycle ≤ 2% Note 4: Drain Supply Voltage = 15V, starting junction temperature (TJS) = 25°C. L = 210µH and IAS = 600mA (See Fig. 6) Note 5: Technique should limit TJ - TC to 10°C maximum Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts. Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5V at TC = 85°C. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSX Drain-to-Source breakdown Voltage ID = 1mA 50 V VSD Source-to-Drain Diode Forward Voltage IF = 350 mA (See Note 3) 0.8 1.1 V IIH High Level Input Current VI = VCC 1 µA IIL Low Level Input Current VI = 0 -1 µA ICC Logic Supply Current IO = 0 0.5 5 mA IOK Output Current at Which Chopping Starts TC = 25°C (See Note 3 and Figg. 3, 4) 0.6 0.8 1.1 A I(nom) Nominal Current VDS(on) = 0.5V I(nom) = ID VCC = 5V TC=85°C (See Note 5, 6, 7) 350 mA ID Off-State Drain Current VDS = 40V TC=25°C 0.1 1 µA VDS = 40V TC=125°C 0.2 5 µA RDS(on) Termination Resistance (See Note 5, 6 and figg. 9, 10) ID = 350mA TC=25°C 1 1.5 Ω ID = 350mA TC=125°C 1.7 2.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit tPHL Propagation Dealy Time, High to Low Level Output from D CL = 30pF ID = 350mA (See Figg. 1, 2, 11) 30 ns tPLH Propagation Dealy Time, Low to High Level Output from D 125 ns tr Rise Time, Drain Output 60 ns tf Fall Time, Drain Output 30 ns ta Reverse Recovery Current Rise Time IF = 350mA di/dt = 20A/ µs (See Note 5, 6 and Fig. 5) 100 ns trr Reverse Recovery Time 300 ns |
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