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3 / 13 page 3/13 STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A 0.85 0.95 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 3.5 A 5.3 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1110 135 30 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480 V 72 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 19 17 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480 V, ID = 7 A, VGS = 10V 38 7 21 53 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 3.5 A RG =4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 43 15 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 300 V, ID = 7 A, RG =4.7 Ω, VGS = 10V (Inductive Load see, Figure 5) 11 8 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 7 28 A A VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 480 3.5 14.5 ns µC A |
Số phần tương tự - STB9NK60ZT4 |
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Mô tả tương tự - STB9NK60ZT4 |
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