STP9NK65ZFP datasheet(2/7 Pages) STMICROELECTRONICS

tên linh kiện	STP9NK65ZFP

Giải thích chi tiết về linh kiện	N-CHANNEL 650V - 1ohm - 7A TO-220/TO-220FP Zener-Protected SuperMESH?줡ower MOSFET

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STP9NK65 - STP9NK65ZFP

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ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤TBD, di/dt ≤TBD, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-

effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage

of external components.

Symbol

Parameter

Value

Unit

STP9NK65Z

STP9NK65ZFP

VDS

Drain-source Voltage (VGS =0)

650

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

650

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

7

7 (*)

A

ID

Drain Current (continuous) at TC = 100°C

4.4

4.4 (*)

A

IDM ( )

Drain Current (pulsed)

28

28 (*)

A

PTOT

Total Dissipation at TC = 25°C

110

30

W

Derating Factor

0.88

0.24

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

3500

KV

dv/dt (1)

Peak Diode Recovery voltage slope

TBD

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

1.14

4.2

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

7A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

TBD

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V

Số phần tương tự - STP9NK65ZFP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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