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1 / 9 page STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7 Ω - 9A TO-220/TO220FP PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.7 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM January 2000 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP9NB60 STP9NB60F P VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain- gate Voltage (RGS =20 k Ω) 600 V VGS Gate-source Voltage ± 30 V ID Drain Current (cont inuous) at Tc =25 oC9.0 9.0(*) A ID Drain Current (cont inuous) at Tc =100 oC5.7 5.7(*) A IDM ( •) Drain Current (pulsed) 36 36 A Ptot T otal Dissipation at Tc =25 oC 125 40 W Derat ing F act or 1.0 0.32 W / o C dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns VISO Insulation Withstand Voltage (DC) 2000 V Tstg St orage Temperature -65 to 150 o C Tj Max. O perat ing Junction Temperat ure 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX (*) Limited only by maximum temperature allowed TYPE VDSS RDS(on) ID ST P9NB60 ST P9NB60FP 600 V 600 V <0.8 Ω <0.8 Ω 9.0 A 9.0 A 1/9 |
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