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STP8NM60FP bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET
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STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =ID(on) xRDS(on)max,
ID = 2.5A
2.4
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
440
100
10
pF
pF
pF
Coss eq. (2)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 480V
50
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
4
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =300 V, ID = 2.5 A
RG = 4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
14
10
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V, ID =5 A,
VGS =10V
13
5
6
18
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 2.5 A
RG =4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
23
10
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID =5 A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
7
10
17
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
8
32
A
A
VSD (1)
Forward On Voltage
ISD = 5 A, VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD =100 V, Tj =25°C
(see test circuit, Figure 5)
300
1950
13
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs
VDD =100 V, Tj =150°C
(see test circuit, Figure 5)
445
3005
13.5
ns
µC
A


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