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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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FDD8880 bảng dữ liệu(PDF) 4 Page - Fairchild Semiconductor |
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FDD8880 bảng dữ liệu(HTML) 4 Page - Fairchild Semiconductor |
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4 / 11 page  ©200 8 Fairchild Semiconductor Corporation FDD8880 Rev. B 3 Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Typical Characteristics T C = 25°C unless otherwise noted 0.1 1 10 100 1000 110 60 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = MAX RATED TC = 25 oC SINGLE PULSE LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS 10 µs 1ms DC 100 µs 10ms 1 10 100 0.01 0.1 1 500 10 tAV, TIME IN AVALANCHE (ms) STARTING TJ = 25 oC STARTING TJ = 150 oC tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0 20 40 60 80 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = -55 oC TJ = 25 oC 0 20 40 60 80 0 0.25 0.5 0.75 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 10V VGS = 4V VGS = 3V VGS = 5V 5 10 15 20 25 2468 10 ID = 1A VGS, GATE TO SOURCE VOLTAGE (V) ID = 35A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 35A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX |
Số phần tương tự - FDD8880_08 |
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Mô tả tương tự - FDD8880_08 |
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