STB7NC80Z datasheet(3/13 Pages) STMICROELECTRONICS

tên linh kiện	STB7NC80Z

Giải thích chi tiết về linh kiện	N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET

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STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3.

∆VBV=αT(25°-T) BVGSO(25°)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

800

V

∆BVDSS/∆TJ Breakdown Voltage Temp.

Coefficient

ID =1mA, VGS = 0

0.9

V/°C

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

345

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 3.3 A

1.3

1.5

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS >ID(on) xRDS(on)max,

ID = 3.3 A

6S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

2350

164

17

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD =400 V, ID =3 A

RG = 4.7Ω VGS =10 V

( see test circuit, Figure 3)

33

12

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =640 V, ID =6 A,

VGS =10V

43

12

15

58

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 640 V, ID =6 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

13

20

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

6.5

26

A

VSD (1)

Forward On Voltage

ISD =6.1 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 6 A, di/dt = 100A/µs

VDD =40V, Tj = 150°C

(see test circuit, Figure 5)

680

6

18

ns

µC

A

Số phần tương tự - STB7NC80Z

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Mô tả tương tự - STB7NC80Z

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