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3 / 13 page 3/13 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV=αT(25°-T) BVGSO(25°) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 800 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID =1mA, VGS = 0 0.9 V/°C IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250µA 345 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 3.3 A 1.3 1.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS >ID(on) xRDS(on)max, ID = 3.3 A 6S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 2350 164 17 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =400 V, ID =3 A RG = 4.7Ω VGS =10 V ( see test circuit, Figure 3) 33 12 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =640 V, ID =6 A, VGS =10V 43 12 15 58 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 640 V, ID =6 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 13 13 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 6.5 26 A A VSD (1) Forward On Voltage ISD =6.1 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A, di/dt = 100A/µs VDD =40V, Tj = 150°C (see test circuit, Figure 5) 680 6 18 ns µC A |
Số phần tương tự - STP7NC80Z |
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Mô tả tương tự - STP7NC80Z |
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