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1 / 6 page STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 1.6 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM September 1998 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it ST P6NB80 STP6NB80F P VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain- gate Voltage (RGS =20 k Ω) 800 V VGS G ate-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC 5.7 5.7(*) A ID Drain Current (continuous) at Tc = 100 oC3.6 2 A IDM ( •) Drain Current (pulsed) 22.8 22.8 A Ptot T otal Dissipation at Tc =25 oC 125 40 W Derating F actor 1.0 0.32 W / o C dv/dt (1) Peak Diode Recovery voltage slope 4 4 V/ns VISO I nsulation W ithstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction T emperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX ( *) Limited only maximum temperature allowed TYPE VDSS RDS(on) ID ST P6NB80 ST P6NB80FP 800 V 800 V <1.9 Ω <1.9 Ω 5.7 A 5.7 A 1/6 |
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