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STP5NK65Z bảng dữ liệu(PDF) 3 Page - STMicroelectronics |
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3 / 9 page 3/9 STP5NK65Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 650 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.1 A 1.5 1.8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 10 V, ID = 2.1 A 5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 680 80 17 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480 V 98 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 325 V, ID = 2.1 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 20 15 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 520V, ID = 4.2 A, VGS = 10V 25 4.4 13.7 35 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 325 V, ID = 2.1 A RG =4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 140 40 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 520 V, ID = 4.2 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 12 7 15 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 5 20 A A VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.2 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 375 1.76 10 ns µC A |
Số phần tương tự - STP5NK65Z |
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Mô tả tương tự - STP5NK65Z |
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