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1 / 13 page 1/13 December 2002 STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1 Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET s TYPICAL RDS(on) = 2.1Ω s EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW GATE INPUT RESISTANCE s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP5NC90Z/FP 900V < 2.5 Ω 4.6 A STB5NC90Z/-1 900V < 2.5 Ω 4.6 A Symbol Parameter Value Unit STP(B)5NC90Z(-1) STP5NC90ZFP VDS Drain-source Voltage (VGS =0) 900 V VDGR Drain-gate Voltage (RGS =20kΩ) 900 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuous) at TC = 25°C 4.6 4.6(*) A ID Drain Current (continuous) at TC = 100°C 2.9 2.9(*) A IDM (q) Drain Current (pulsed) 18 18 A PTOT Total Dissipation at TC = 25°C 125 40 W Derating Factor 1 0.32 W/°C IGS Gate-source Current (*) ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 3KV dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤4.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX (*).Limited only by maximum temperature allowed TO-220 1 2 3 TO-220FP 1 2 3 I²PAK (Tabless TO-220) 1 3 D²PAK |
Số phần tương tự - STB5NC90Z-1 |
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Mô tả tương tự - STB5NC90Z-1 |
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