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STB5NC90Z-1 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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December 2002
STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1
Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
s
TYPICAL RDS(on) = 2.1Ω
s
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s
100% AVALANCHE TESTED
s
VERY LOW GATE INPUT RESISTANCE
s
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP5NC90Z/FP
900V
< 2.5
4.6 A
STB5NC90Z/-1
900V
< 2.5
4.6 A
Symbol
Parameter
Value
Unit
STP(B)5NC90Z(-1)
STP5NC90ZFP
VDS
Drain-source Voltage (VGS =0)
900
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
900
V
VGS
Gate- source Voltage
± 25
V
ID
Drain Current (continuous) at TC = 25°C
4.6
4.6(*)
A
ID
Drain Current (continuous) at TC = 100°C
2.9
2.9(*)
A
IDM (q)
Drain Current (pulsed)
18
18
A
PTOT
Total Dissipation at TC = 25°C
125
40
W
Derating Factor
1
0.32
W/°C
IGS
Gate-source Current (*)
±50
mA
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
Ω)
3KV
dv/dt
Peak Diode Recovery voltage slope
3
V/ns
VISO
Insulation Winthstand Voltage (DC)
--
2000
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤4.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
(*).Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
1
2
3
I²PAK
(Tabless TO-220)
1
3
D²PAK


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