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STP5NC50FP bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET
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December 2002
STP5NC50 - STP5NC50FP
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3
Ω - 5.5A TO-220/FP/D2PAK/I2PAK
PowerMesh™II MOSFET
s
TYPICAL RDS(on) = 1.3Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)ISD ≤5.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
TYPE
VDSS
RDS(on)
ID
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
500 V
500 V
500 V
500 V
<1.5
<1.5
<1.5
<1.5
5.5A
5.5A
5.5A
5.5A
Symbol
Parameter
Value
Unit
STP5NC50
STB5NC50/-1
STP5NC50FP
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
5.5
5.5(*)
A
ID
Drain Current (continuos) at TC = 100°C
3.5
3.5(*)
A
IDM ( )
Drain Current (pulsed)
22
22
A
PTOT
Total Dissipation at TC = 25°C
100
35
W
Derating Factor
0.8
0.28
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 175
-65 to 175
°C
°C
(*)Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
TO-220
TO-220FP
1
3
D2PAK
1
2
3
I2PAK


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