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1 / 8 page STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ™ ” POWER MOSFET s TYPICAL RDS(on) = 0.014 Ω s EXCEPTIONAL dv/dt CAPABILITY s LOW GATE CHARGE A 100 oC s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size ™ ” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM October 1997 1 2 3 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain- gate Voltage (RGS =20 k Ω) 30 V VGS Gate-source Voltage ± 15 V ID Drain Current (continuous) at Tc =25 oC40 A ID Drain Current (continuous) at Tc =100 oC28 A IDM( •) Drain Current (pulsed) 160 A Pto t Total Dissipation at Tc =25 oC80 W Derat ing Fact or 0.53 W/ oC dv/dt (1) Peak Diode Recovery voltage slope 7 V/ ns Tst g St orage Temperature -65 to 175 oC Tj Max. Operating Junction T emperat ure 175 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 40 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST P40NE03L-20 30 V <0. 020 Ω 40 A 1/8 |
Số phần tương tự - STP40NE03L-20 |
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Mô tả tương tự - STP40NE03L-20 |
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