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3 / 15 page 3/15 STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID =50 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10 V,ID = 1.2 A 3.3 3.6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =20V, ID = 1.2 A 1.8 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V,f= 1MHz, VGS = 0 311 43 8 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0, VDS = 0 to 400 V 26 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =300 V, ID = 1.5 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 9 14 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400 V, ID = 2.4 A, VGS =10 V 11.8 2.6 6.4 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 480 V, ID =3 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 19 14 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480 V, ID =3 A, RG =4.7Ω, VGS =10 V (Inductive Load see, Figure 5) 11 14 24 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 2.4 9.6 A A VSD (1) Forward On Voltage ISD = 2.4 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, di/dt = 100A/µs VDD =35V, Tj = 150°C (see test circuit, Figure 5) 306 948 6.2 ns nC A |
Số phần tương tự - STP3NK60Z |
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Mô tả tương tự - STP3NK60Z |
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