STP3NB80 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	STP3NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET

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STP3NB80

STP3NB80FP

N - CHANNEL 800V - 4.6

Ω - 2.6A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 4.6

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY(UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP3NB80

STP3NB80F P

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC2.6

2.6 (

••)A

ID

Drain Current (continuous) at Tc =100

oC1.6

1.6 (

••)

A

IDM (

•)

Drain Current (pulsed)

10.4

A

Ptot

T otal Dissipation at Tc =25

oC90

35

W

Derating Factor

0.72

0.28

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope



4.5

V/ns

VISO

I nsulat ion W ithstand Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 2.6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMA

(

••) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P3NB80

ST P3NB80FP

800 V

<6.5

Ω

<6.5

Ω

2.6 A

1/9

Số phần tương tự - STP3NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Suntac Electronic Corp.	STP3NB80	163Kb / 4P	POWER MOSFET
VBsemi Electronics Co.,...	STP3NB80FP	2Mb / 9P	Power MOSFET

More results

Mô tả tương tự - STP3NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh??MOSFET
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
	STP6NB90	109Kb / 9P	N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET
	STP5NB100	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
	STP7NB30	108Kb / 9P	N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET

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