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1 / 6 page STP36NF03L N-CHANNEL 30V - 0.015 Ω - 36A TO-220 LOW GATE CHARGE STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.015 Ω s TYPICAL Qg = 18 nC @ 10V s OPTIMAL RDS(on) xQg TRADE-OFF s CONDUCTION LOSSES REDUCED s SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size ™” strip-based process. The resul- ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ® INTERNAL SCHEMATIC DIAGRAM January 2000 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain- gate Voltage (RGS =20 k Ω)30 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc =25 oC36 A ID Drain Current (continuous) at Tc =100 oC25 A IDM ( •) Drain Current (pulsed) 144 A Ptot T otal Dissipat ion at Tc =25 oC75 W Derating Factor 0.5 W / o C Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area T YPE VDSS RDS(on) ID STP36NF03L 30 V < 0. 02 Ω 36 A 1 2 3 TO-220 1/6 |
Số phần tương tự - STP36NF03L |
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Mô tả tương tự - STP36NF03L |
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