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STP2HNC60FP bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh?줚I MOSFET
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May 2001
STP2HNC60
STP2HNC60FP
N-CHANNEL 600V - 4
Ω - 2.2A TO-220/TO-220FP
PowerMesh™II MOSFET
s
TYPICAL RDS(on) = 4 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
.
TYPE
VDSS
RDS(on)
ID
STP2HNC60
STP2HNC60FP
600 V
600 V
< 5
< 5
2.2 A
2.2 A
Symbol
Parameter
Value
Unit
STP2HNC60
STP2HNC60FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25°C
2.2
2.2(*)
A
ID
Drain Current (continuos) at TC = 100°C
1.4
1.4(*)
A
IDM (q)
Drain Current (pulsed)
8.8
8.8(*)
A
PTOT
Total Dissipation at TC = 25°C
60
30
W
Derating Factor
0.48
0.24
W/°C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
VISO
Insulation Withstand Voltage (DC)
--
2000
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1)ISD ≤ 2.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*).Limited only by maximum temperature allowed
TO-220
1
2
3
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM


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