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STP2HNC60FP bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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1 / 9 page 1/9 May 2001 STP2HNC60 STP2HNC60FP N-CHANNEL 600V - 4 Ω - 2.2A TO-220/TO-220FP PowerMesh™II MOSFET s TYPICAL RDS(on) = 4 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area . TYPE VDSS RDS(on) ID STP2HNC60 STP2HNC60FP 600 V 600 V < 5 Ω < 5 Ω 2.2 A 2.2 A Symbol Parameter Value Unit STP2HNC60 STP2HNC60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 2.2 2.2(*) A ID Drain Current (continuos) at TC = 100°C 1.4 1.4(*) A IDM (q) Drain Current (pulsed) 8.8 8.8(*) A PTOT Total Dissipation at TC = 25°C 60 30 W Derating Factor 0.48 0.24 W/°C dv/dt Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤ 2.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*).Limited only by maximum temperature allowed TO-220 1 2 3 1 2 3 TO-220FP INTERNAL SCHEMATIC DIAGRAM |
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