công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
STB22NM60-1 bảng dữ liệu(PDF) 3 Page - STMicroelectronics |
|
STB22NM60-1 bảng dữ liệu(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60 ELECTRICAL CHARACTERISTICS (CONTINUE) DYNAMIC (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS >ID(on) xRDS(on)max, ID =11 A TBD S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 1590 803 52 pF pF pF Coss eq. (2) Equivalent Output Capacitance VGS =0V, VDS = 0V to 400V 130 pF Rg Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =200 V, ID =11A RG = 4.7Ω VGS =10 V (see test circuit, Figure 3) 25 20 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =400 V, ID =22 A, VGS =10 V 40 11 25 71 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480 V, ID =22A, RG =4.7Ω, VGS =10 V (see test circuit, Figure 5) 13 ns tf Fall Time 15 ns tc Cross-over Time 26 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 20 A ISDM (2) Source-drain Current (pulsed) 80 A VSD (1) Forward On Voltage ISD =22A,VGS =0 1.5 V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A, di/dt = 100 A/µs, VDD =100 V, Tj =25°C (see test circuit, Figure 5) 416 5.6 27 ns µC A trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A, di/dt = 100 A/µs, VDD =100 V, Tj =150°C (see test circuit, Figure 5) 544 7.3 28 ns µC A |
Số phần tương tự - STB22NM60-1 |
|
Mô tả tương tự - STB22NM60-1 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |