công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

STP21N05L bảng dữ liệu(PDF) 2 Page - STMicroelectronics

tên linh kiện STP21N05L
Giải thích chi tiết về linh kiện  N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP21N05L bảng dữ liệu(HTML) 2 Page - STMicroelectronics

  STP21N05L Datasheet HTML 1Page - STMicroelectronics STP21N05L Datasheet HTML 2Page - STMicroelectronics STP21N05L Datasheet HTML 3Page - STMicroelectronics STP21N05L Datasheet HTML 4Page - STMicroelectronics STP21N05L Datasheet HTML 5Page - STMicroelectronics STP21N05L Datasheet HTML 6Page - STMicroelectronics STP21N05L Datasheet HTML 7Page - STMicroelectronics STP21N05L Datasheet HTML 8Page - STMicroelectronics STP21N05L Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
THERMAL DATA
TO-220
ISOWATT220
Rthj-case
Thermal Resist ance Junct ion-case
Max
1.88
4. 29
oC/W
Rthj-amb
Rthc- sink
Tl
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
21
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, ID =IAR,VDD =25 V)
80
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
20
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
oC, pulse width limited by Tj max,
δ <1%)
14
A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
50
V
IDS S
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 15 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =250
µA1
1.6
2.5
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =5 V
ID = 10.5 A
VGS =5 V
ID =10.5 A
Tc = 100
oC
0. 065
0.085
0. 17
ID(on)
On St ate Drain Current
VDS >ID(on) xRD S(on)max
VGS =10 V
21
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRD S(on)max
ID = 10.5 A
6
15
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS =0
700
250
70
1000
350
100
pF
pF
pF
STP21N05L/FI
2/10


Số phần tương tự - STP21N05L

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
STMicroelectronics
STP21N06L STMICROELECTRONICS-STP21N06L Datasheet
197Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP21N06LFI STMICROELECTRONICS-STP21N06LFI Datasheet
197Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
More results

Mô tả tương tự - STP21N05L

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
STMicroelectronics
STK12N05L STMICROELECTRONICS-STK12N05L Datasheet
180Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD12N05L STMICROELECTRONICS-STD12N05L Datasheet
176Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP50N06L STMICROELECTRONICS-STP50N06L Datasheet
199Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP55N06L STMICROELECTRONICS-STP55N06L Datasheet
213Kb / 7P
   N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD17N05L STMICROELECTRONICS-STD17N05L Datasheet
172Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD8N10L STMICROELECTRONICS-STD8N10L Datasheet
381Kb / 9P
   N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD15N06L STMICROELECTRONICS-STD15N06L Datasheet
140Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP20N10L STMICROELECTRONICS-STP20N10L Datasheet
203Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP21N06L STMICROELECTRONICS-STP21N06L Datasheet
197Kb / 10P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP19N06L STMICROELECTRONICS-STP19N06L Datasheet
142Kb / 7P
   N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


bảng dữ liệu tải về

Go To PDF Page


Link URL




Chính sách bảo mật
ALLDATASHEET.VN
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com