STB20NM60 datasheet(3/15 Pages) STMICROELECTRONICS

tên linh kiện	STB20NM60

Giải thích chi tiết về linh kiện	N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x R DS(on)max,

ID = 10 A

11

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1500

350

35

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 400 V

215

pF

td(on)

tr

td(off)

tf

tc

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Cross-over Time

VDD = 200 V, ID = 10 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 480 V, ID = 20 A

(See test circuit, Figure 5)

25

20

6

11

21

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400 V, ID = 20 A,

VGS = 10V

39

10

20

54

nC

Rg

Gate Input Resistance

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

Open Drain

1.6

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

20

80

A

VSD (1)

Forward On Voltage

ISD = 20 A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =20 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 25°C

(see test circuit, Figure 5)

390

5

25

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =20 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150°C

(see test circuit, Figure 5)

510

6.5

26

ns

µC

A

Số phần tương tự - STB20NM60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB20NM60	440Kb / 18P	N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET
Inchange Semiconductor ...	STB20NM60	313Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STB20NM60-1	440Kb / 18P	N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET
Inchange Semiconductor ...	STB20NM60-1	358Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STB20NM60A-1	309Kb / 12P	N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I짼PAK/TO-220/TO-220FP

More results

Mô tả tương tự - STB20NM60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP20NM50	532Kb / 16P	N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
	STP22NM50	356Kb / 10P	N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?줡ower MOSFET
	STB20NM60-1	440Kb / 18P	N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET
	STP22NM60	386Kb / 11P	N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?줡ower MOSFET
	STP11NM60	364Kb / 16P	N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
	STB20NM50	317Kb / 14P	N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET
	STP25NM60N	523Kb / 18P	N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STP11NM60	548Kb / 12P	N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET
	STP14NK60Z	672Kb / 17P	N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
	STP9NK60Z	581Kb / 13P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET June 2002

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Số phần tương tự - STB20NM60

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