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STN2NE10L bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STN2NE10L
N-CHANNEL 100V - 0.33
Ω - 2A SOT-223
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.33
Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
AVALANCHE RUGGED TECHNOLOGY
s
100 % AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVES,etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
®
INTERNAL SCHEMATIC DIAGRAM
March 2000
1
2
2
3
SOT-223
TYPE
VDSS
RDS(on)
ID
STN2NE10L
100 V
< 0.4
Ω
1. 8 A
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
VDS
Drain-source Volt age (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
100
V
VGS
Gat e-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc =25
oC1.8
A
ID
Drain Current (continuous) at Tc =100
oC1.3
A
IDM(
•)
Drain Current (pulsed)
7.2
A
Ptot
Tot al Dissipation at Tc =25
oC2.5
W
Derating F act or
0.02
W /
oC
dv/ dt(1 )
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage T emperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 7.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
1/8


Số phần tương tự - STN2NE10L

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
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STMicroelectronics		 STN2NE10L STMICROELECTRONICS-STN2NE10L Datasheet
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Mô tả tương tự - STN2NE10L

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
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STMicroelectronics		 STN2NF10 STMICROELECTRONICS-STN2NF10 Datasheet
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