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August 2006
Rev 3
1/19
19
ST6G3238E
Dual supply level translator for SD/ MINISD/ T-FLASH
With ±8KV contact discharge ESD protection
Features
High speed: tPD = 4.4ns (Typ.) at TA = 85°C
VCCB = 2.7V VCCA = 1.8V
Low power dissipation:
ICCA = ICCB = 5µA (Max.) at TA = 85°C
Balanced propagation delays: TPLH
T
PHL
Power down protection on inputs and outputs
26
Ω series resistor on a side
EMI filter on B side
Integrated pull-up and pull-down resistor on B
side
Operating voltage range:
–VCCA (Opr) = 1.4V to VCCB
–VCCB (Opr) = 1.4V to 3.6V
Latch-up performance exceeds 500mA
(JESD17)
ESD protection for card side (B port, CD and
WP pins) ±8kV, IEC 61000-4-2 ESD or contact
discharge:
HBM > ±15kV (MIL STD 883 method 3015);
ESD protection for A-port:
HBM > ±2kV (MIL STD 883 method 3015);
ROHS Compliant for µTFBGA25 Package
Description
The ST6G3238E is a dual supply low voltage
CMOS Level Translator for SD/ MiniSD/ T-Flash
fabricated with sub-micron silicon gate and five-
layer metal wiring C2MOS technology. Designed
for use as an interface between a 3.3V bus and a
2.5V or 1.8V bus in a mixed 3.3V/1.8V, 3.3V/2.5V
and 2.5V/1.8V supply systems, it achieves high
speed operation while maintaining the CMOS low
power dissipation. The A port is designed to track
VCCA. The B port is designed to track VCCB.
This device is intended for two-way asynchronous
communication between data buses and the
direction of data transmission is determined by
CMD-dir/ DATA0-dir/ DAT123-dir inputs. The B-
port interfaces with the 3V bus, the A-port with the
2.5V and 1.8V bus.
All inputs are equipped with protection circuits
against static discharge, giving them ±2kV (on A-
side except CD and WP pins) and ±15kV on (B
side, CD and WP pins) ESD immunity and
transient excess voltage. See the section on
integrated ESD protections and resistors for more
information.
µTFBGA25
TSSOP24
www.st.com
Order codes
Part Number
Package
Tape and Reel
ST6G3238E
TSSOP24
ST6G3238ETTR
ST6G3238E
µTFBGA25
ST6G3238ETBR


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