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STPIC6C595 bảng dữ liệu(PDF) 7 Page - STMicroelectronics |
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7 / 22 page STPIC6C595 Electrical characteristics 7/22 3.2 Switching characteristics Note: 1 All voltage value are with respect to GND 2 Each power DMOS source is internally connected to GND 3 Pulse duration ≤ 100 µs and duty cycle ≤ 2 % 4 Drain supply voltage = 15 V, starting junction temperature (TJS) = 25 °C. L = 1.5 H and IAS = 200 mA (see Fig. 11 and 12) 5 Technique should limit TJ - TC to 10 °C maximum 6 These parameters are measured with voltage sensing contacts separate from the current- carrying contacts. 7 Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85 °C. Table 6. Switching characteristics (VCC = 5 V, TC = 25 °C, unless otherwise specified.) Symbol Parameter Test conditions Min Typ Max Unit tPHL Propagation delay time, high to low level output from G CL = 30 pF, ID = 75 mA (See Figure 4, Figure 5, Figure 6, Figure 7, Figure 20) 80 ns tPLH Propagation delay time, low to high level output from G 130 ns tr Rise time, drain output 60 ns tf Fall time, drain output 50 ns tpd propagation delay time 20 ns ta Reverse recovery current rise time IF = 100 mA, di/dt = 10 A/µs (See Figure 5, Figure 6, and Figure 9, Figure 10 ) 39 ns trr Reverse recovery time 115 ns |
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