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STGY50NB60 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STGY50NB60 bảng dữ liệu(HTML) 3 Page - STMicroelectronics

  STGY50NB60 Datasheet HTML 1Page - STMicroelectronics STGY50NB60 Datasheet HTML 2Page - STMicroelectronics STGY50NB60 Datasheet HTML 3Page - STMicroelectronics STGY50NB60 Datasheet HTML 4Page - STMicroelectronics STGY50NB60 Datasheet HTML 5Page - STMicroelectronics STGY50NB60 Datasheet HTML 6Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
tr(voff)
td (off)
tf
Eoff(**)
Ets(r)
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
VCC =480 V
IC =50 A
RGE =10
Ω
VGE =15 V
166
48
326
90
2.1
3
ns
ns
ns
ns
mJ
mJ
tc
tr(voff)
td (off)
tf
Eoff(**)
Ets(r)
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
VCC =480 V
IC =50 A
RGE =10
Ω
VGE =15 V
Tj = 125
oC
270
75
340
200
2.9
3.85
ns
ns
ns
ns
mJ
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
T est Conditions
Min.
T yp.
Max.
Unit
If
Ifm
Forward Current
Forward Current pulsed
50
400
A
A
Vf
Forward On-Voltage
If =50 A
If =50 A
T j =125
oC2
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If =50 A
VR= 200 V
dI/dt = 100 A/
µSTj = 125 oC
200
nS
nC
A
(
•) Pulse width limited by max. junction temperature
(r) Include recovery losses on the STTA2006 freewheeling diode
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
STGY50NB60HD
3/6


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