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STE40NC60 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET
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STE40NC60 bảng dữ liệu(HTML) 1 Page - STMicroelectronics

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May 2002
STE40NC60
N-CHANNEL 600V - 0.098
Ω - 40A ISOTOP
PowerMesh™II MOSFET
n
TYPICAL RDS(on) = 0.098 Ω
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STE40NC60
600V
< 0.13
40 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
40
A
ID
Drain Current (continuos) at TC = 100°C
23
A
IDM (l)
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C
460
W
Derating Factor
3.68
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
VISO
Insulation Winthstand Voltage (AC-RMS)
2500
V
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1) ISD≤ 40A, di/dt≤100 A/µs, VDD≤ 24V, Tj≤TjMAX
ISOTOP
INTERNAL SCHEMATIC DIAGRAM


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