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STD5NM60 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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STD5NM60 bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
1 / 6 page 1/6 PRELIMINARY DATA May 2000 STD5NM60 N-CHANNEL 600V - 0.8 Ω - 5A DPAK MDmesh ™ Power MOSFET s TYPICAL RDS(on) = 0.8Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh ™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH ™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS The MDmesh ™ family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS ( •)Pulse width limited by safe operating area (1)ISD<5A, di/dt<200A/µs, VDD<V(BR)DSS,TJ<TJMAX TYPE VDSS RDS(on) ID STD5NM60 600V <0.9 Ω 5A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS =20 kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC =25°C5 A ID Drain Current (continuos) at TC = 100°C 3.1 A IDM (q) Drain Current (pulsed) 20 A PTOT Total Dissipation at TC =25°C 50 W Derating Factor 0.4 W/ °C dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C 1 3 DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM |
Số phần tương tự - STD5NM60 |
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Mô tả tương tự - STD5NM60 |
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