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SDR9JUFSMSS bảng dữ liệu(PDF) 1 Page - Solid States Devices, Inc |
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SDR9JUFSMSS bảng dữ liệu(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0057C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR9__ UF __ __ ⏐ ⏐ ⏐ ⏐ L Screening 2/ = None TX = TX Level TXV = TXV Level S = S Level L Package ____ = None SMS = Surface Mount Square Tab ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L Recovery Time UF = Ultra Fast ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L Voltage J = 600 V K = 800 V M = 1000 V SDR9JUF & UFSMS thru SDR9MUF & UFSMS 9 AMP 800-1000 Volts 70 nsec ULTRA FAST RECOVERY RECTIFIER Features: • Ultra Fast Recovery: 70 nsec maximum • PIV to 1000 Volts • Low Reverse Leakage Current • Hermetically Sealed • Single Chip Construction • Replaces Larger DO-4 Rectifiers • Low Thermal Resistance • Fast and Hyper Fast Recovery Available. Contact Factory. • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Symbol Value Units DC Blocking Voltage SDR9JUF & UFSMS SDR9KUF & UFSMS SDR9MUF & UFSMS VRRM VRWM VR 600 800 1000 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) Io 9 Amps Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) IFSM 125 Amps Operating & Storage Temperature Top & Tstg -65 to +175 ºC Maximum Thermal Resistance Junction to Leads, L = .125 " (Axial Lead) Junction to End Tab (Surface Mount) RθJL RθJE 8 4 ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. Axial Leaded SMS |
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