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STGW35NC120HD bảng dữ liệu(PDF) 5 Page - STMicroelectronics |
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5 / 13 page STGW35NC120HD Electrical characteristics 5/13 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 29 11 1820 ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TC=125 °C (see Figure 17) 27 14 1580 ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 90 275 312 ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TC=125 °C (see Figure 17) 150 336 592 ns ns ns Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 1660 4438 6098 µJ µJ µJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, TC=125 °C (see Figure 17) 3015 6900 9915 µJ µJ µJ Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 20 A IF = 20 A, TC = 125 °C 1.9 1.7 2.5 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 20 A, VR = 27 V, TC=125 °C, di/dt = 100 A/µs (see Figure 20) 152 722 9 ns nC A |
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