STP60NF06LFP datasheet(1/11 Pages) STMICROELECTRONICS

tên linh kiện	STP60NF06LFP

Giải thích chi tiết về linh kiện	N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

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July 2003

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STB60NF06L

STP60NF06L STP60NF06LFP

N-CHANNEL 60V - 0.012

Ω - 60A TO-220/TO-220FP/D2PAK

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.012Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

175 oC OPERATING RANGE

s

LOW THRESHOLD DRIVE

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

AUTOMOTIVE

TYPE

VDSS

RDS(on)

ID

STB60NF06L

STP60NF06L

STP60NF06LFP

60 V

<0.014

Ω

<0.014

Ω

<0.014

Ω

60 A

60 A(*)

TO-220

1

2

3

TO-220FP

1

3

D2PAK

TO-263

(Suffix “T4”)

1

2

3

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(*) Refer to SOA for the max allowable current values on FP-type

due to Rth value

(1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 30A, VDD = 30V

Symbol

Parameter

Value

Unit

STB60NF06L

STP60NF06L

STP60NF06LFP

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 15

V

ID

Drain Current (continuous) at TC = 25°C

60

60(*)

A

ID

Drain Current (continuous) at TC = 100°C

42

42(*)

A

IDM(•)

Drain Current (pulsed)

240

240(*)

A

Ptot

Total Dissipation at TC = 25°C

110

30

W

Derating Factor

0.73

0.2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

20

V/ns

EAS (2)

Single Pulse Avalanche Energy

320

mJ

VISO

Insulation Withstand Voltage (DC)

------

2000

V

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Số phần tương tự - STP60NF06LFP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP60NF06LFP	337Kb / 9P	N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET
STMicroelectronics	STP60NF06LFP	516Kb / 16P	N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET

More results

Mô tả tương tự - STP60NF06LFP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB60NF06L	516Kb / 16P	N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET
	STB60NF06LT4	520Kb / 16P	N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET
	STP60NE06L-16	106Kb / 9P	N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET
	STP60NF06FP	330Kb / 9P	N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET??POWER MOSFET
	STB20NF06L	395Kb / 16P	N-channel 60V - 0.06廓 - 20A - D2PAK/TO-220/TO-220FP STripFET??II Power MOSFET
	STP16NF06	367Kb / 9P	N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET
	STP16NF06L	337Kb / 9P	N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET
	STB55NF06	543Kb / 18P	N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET
	STF12PF06	260Kb / 10P	P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET
	STP36NF06	310Kb / 9P	N-channel 60V - 0.032 - 30A - TO-220/TO-220FP STripFET II Power MOSFET

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