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STA013B bảng dữ liệu(PDF) 5 Page - STMicroelectronics |
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STA013B bảng dữ liệu(HTML) 5 Page - STMicroelectronics |
5 / 38 page 1. ELECTRICAL CHARACTERISTICS: VDD = 2.7V ±0.3V; Tamb = 0 to 70°C; Rg = 50Ω unless otherwise specified DC OPERATING CONDITIONS Symbol Parameter Value VDD Power Supply Voltage 2.4 to 3.6V GENERAL INTERFACE ELECTRICAL CHARACTERISTICS Symbol Parameter Test Condition Min. Typ. Max. Unit Note IIL Low Level Input Current Without pull-up device Vi = 0V -10 10 µA1 IIH High Level Input Current Without pull-up device Vi = VDD = 3.6V -10 10 µA1 Vesd Electrostatic Protection Leakage < 1 µA 2000 V 2 Note 1: The leakage currents are generally very small, < 1nA. The value given here is a maximum that can occur after an electrostatic stress on the pin. Note 2: Human Body Model. DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Condition Min. Typ. Max. Unit Note VIL Low Level Input Voltage 0.2*VDD V VIH High Level Input Voltage 0.8*VDD V Vol Low Level Output Voltage Iol = Xma 0.4V V 1, 2 Voh High Level Output Voltage 0.85*VDD V1, 2 Note 1: Takes into account 200mV voltage drop in both supply lines. Note 2: X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability. Symbol Parameter Test Condition Min. Typ. Max. Unit Note Ipu Pull-up current Vi = 0V; pin numbers 7, 24 and 26; VDD = 3V -25 -66 -125 µA1 Rpu Equivalent Pull-up Resistance 50 k Ω Note 1: Min. condition: VDD = 2.4V, 125°C Min process Max. condition: VDD = 3.6V, -20°C Max. POWER DISSIPATION Symbol Parameter Test Condition Min. Typ. Max. Unit Note PD Power Dissipation @ VDD = 3V Sampling_freq ≤24 kHz 76 mW Sampling_freq ≤32 kHz 79 mW Sampling_freq ≤48 kHz 85 mW STA013 - STA013B - STA013T 5/38 |
Số phần tương tự - STA013B |
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Mô tả tương tự - STA013B |
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