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STI16NM50N bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
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March 2008
Rev 2
1/18
18
STB16NM50N - STF/I16NM50N
STP16NM50N - STW16NM50N
N-channel 500 V - 0.21
Ω - 15 A MDmesh™ II Power MOSFET
D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1.
Internal schematic diagram
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB16NM50N
550 V
0.26
15 A
STI16NM50N
550 V
0.26
15 A
STF16NM50N
550 V
0.26
15 A (1)
1.
Limited only by maximum temperature allowed
STP16NM50N
550 V
0.26
15 A
STW16NM50N
550 V
0.26
15 A
TO-220
TO-220FP
I²PAK
1
2
3
1
2
3
1
2
3
1
2
3
TO-247
D²PAK
1
3
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB16NM50N
B16NM50N
D²PAK
Tape and reel
STI16NM50N
I16NM50N
I²PAK
Tube
STF16NM50N
F16NM50N
TO-220FP
Tube
STP16NM50N
P16NM50N
TO-220
Tube
STW16NM50N
W16NM50N
TO-247
Tube
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