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4 / 16 page Electrical characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 800 V IDSS Peak diode recovery voltage slope VDS =Max rating, VDS =Max rating, Tc=125°C 1 50 µA µA IGSS Gate body leakage current (VGS = 0) VGS = ± 20V ± 10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID = 5.25A 0.65 0.75 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 5.25A 12 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2620 250 53 pF pF pF Cosseq (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0V to 640V 100 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640V, ID = 10.5A VGS =10V (see Figure 18) 87 14 44 nC nC nC td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=400 V, ID= 5.25A, RG=4.7Ω, VGS=10V (see Figure 19) 30 18 70 20 ns ns ns ns tr(Voff) tf tc Off voltage rise time Fall time Cross-over time VDD=640 V, ID= 10.5A, RG=4.7Ω, VGS=10V (see Figure 19) 16 15 28 ns ns ns |
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