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STY80NM60N bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 600 V - 0.035 廓 - 80 A - Max247 second generation MDmesh??Power MOSFET
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Electrical ratings
STY80NM60N
2/9
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
50.4
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
560
W
Derating factor
4.48
W/°C
dv/dt (2)
2.
ISD 80A, di/dt 400 A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
–55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.22
°C/W
Rthj-amb
Thermal resistance junction-ambient max
30
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Tbd
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Ias, Vdd=50 V)
Tbd
mJ


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