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STPR1620CT bảng dữ liệu(PDF) 1 Page - Sirectifier Semiconductors |
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STPR1620CT bảng dữ liệu(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page STPR1610CT thru STPR1620CT FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB STPR1610CT STPR1620CT VRRM V 100 200 VRMS V 70 140 VDC V 100 200 A=Anode, C=Cathode, TAB=Cathode Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=120 C IFSM Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) TP=10ms TP=8.3ms Maximum Forward Voltage Pulse Width=300us Duty Cycle IF=8A @TJ=25 C IF=8A @TJ=125 C IF=16A @TJ=25 C IF=16A @TJ=125 C VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance Per Element (Note 1) TRR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance TJ, TSTG Operating And Storage Temperature Range Maximum Ratings 16 80 90 1.1 1.0 1.25 1.20 5 100 80 30 3.0 -55 to +150 A A V Unit uA pF ns o o o o o o ROJC C/W o C o NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. A A C C(TAB) A C A o Ultra Fast Recovery Diodes |
Số phần tương tự - STPR1620CT |
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Mô tả tương tự - STPR1620CT |
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