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MC33810 bảng dữ liệu(PDF) 5 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33810
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
VPWR Supply Voltage(1)
VPWR
-1.5 to 45
VDC
VDD Supply Voltage(1)
VDD
-0.3 to 7.0
VDC
SPI Interface and Logic Input Voltage (CS, SI, SO, SCLK, OUTEN,
DIN0 - DIN3, GIN0 - GIN3, SPKDUR, NOMI, MAXI, RSP,RSN)
VIL
VIH
-0.3 to VDD
VDC
IGBT/General Purpose Gate Pre-driver Drain Voltage (VFB0 to VFB3)
VFB
-1.5 to 60
VDC
Injector Output Voltage (OUTx)
VOUTX
-1.5 to 60
VDC
General Purpose Gate Pre-driver Output Voltage (GDx)
VGDx
-0.3 to 10
VDC
Output Clamp Energy (OUT0 to OUT3)(Single Pulse)
TJUNCTION = 150°C, IOUT = 1.5A
ECLAMP
100
mJ
Output Clamp Energy (OUT0 to OUT3)(Continuous Pulse)
TJUNCTION = 125°C, IOUT = 1.0A (Max Injector frequency is 70Hz)
ECLAMP
100
mJ
Output Continuous Current (OUT0 to OUT3)
TJUNCTION = 150°C
IOSSSS
2.0
A
Maximum Voltage for RSN and RSP inputs
VRSX
-0.3 - VDD
VDC
Frequency of SPI Operation (VDD = 5.0V)
6.0
MHz
ESD Voltage(2), (3)
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
VESD1
VESD2
VESD3
±2000
±200
±750
V
THERMAL RATINGS
Operating Temperature
Ambient
Junction2
Case
TA
TJ
TC
-40 to 125
-40 to 150
-40 to 125
°C
Storage Temperature
TSTG
-55 to 150
°C
Power Dissipation (TA = 25°C)
PD
1.7
W
Peak Package flow Temperature During Solder Mounting
DWB Suffix
EW Suffix
TSOLDER
240
245
°C
Thermal Resistance
Junction-to-Ambient
Junction- to-Lead
Junction-to-Flag
RθJA
RθJL
RθJC
75
8.0
1.2
°C/W
Notes
1.
Exceeding these limits may cause malfunction or permanent damage to the device.
2.
ESD data available upon request.
3.
ESD testing is performed in accordance with the Human Body Model (HBM) (AEC-Q100-002), the Machine Model (MM) (AEC-Q100-
003), and the Charge Device Model (CDM), Robotic (AEC-Q100-011).


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